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| INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1726 DESCRIPTION *Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -2A *High Switching Speed *Complement to Type 2SC4512 APPLICATIONS *Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB B Base Collector Current-Continuous Total Power Dissipation @ TC=25 Junction Temperature -3 A PC 50 W TJ 150 Tstg Storage Temperature Range -55~150 INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= -25mA ; IB= 0 IC= -2A; IB= -0.2A B 2SA1726 MIN -80 TYP. MAX UNIT V -0.5 -10 -10 50 20 150 180 V A A VCB= -80V ; IE= 0 VEB= -6V; IC= 0 IC= -2A ; VCE= -4V IE= 0.5A ; VCE= -12V IE= 0; VCB= -10V; ftest= 1MHz MHz pF Switching Times ton tstg tf Turn-on Time Storage Time Fall Time IC= -3A ,RL= 10, IB1= -IB2= -0.3A,VCC= -30V 0.18 1.10 0.21 s s s hFE Classifications O 50-100 P 70-140 Y 90-180 2 |
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